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Author:

Tan, L. (Tan, L..) | Liu, X. (Liu, X..) | Yang, P. (Yang, P..) | Li, W. (Li, W..) | Yang, W. (Yang, W..) | Li, A. (Li, A..) | Gu, H. (Gu, H..) | Wang, Z. (Wang, Z..)

Indexed by:

EI Scopus SCIE

Abstract:

The development of high-performance hydrogen sensors is considered of great significance for the safety of hydrogen energy and related industries. The two-dimensional (2D) MoS2 nanomaterials have exhibited great superiority in building fast and reliable room-temperature hydrogen sensors. However, their poor sensitivity and selectivity issues still limit their wide exploitation. In this work, nano-SnO2-modified MoS2 thin films with structure-dependent n-p tunable hydrogen response behaviours were reported. The in-situ scanning Kelvin probe microscopy (SKPM) study on the hydrogen response of the SnO2/MoS2 systems revealed the different reductions in the surface potential of SnO2 (0.38 eV) and MoS2 (0.26 eV) in a hydrogen environment, which results in different variations in the interface potential barrier with the increasing surface coverage of SnO2. As a result, the contribution from the interface effect to the n-type hydrogen response was changed from the positive enhancement to the negative compensation. The sensor exhibited a fast, enhanced, and selective n-type hydrogen response with the SnO2 coverage down to 6.4%, while a p-type sensor response was achieved when the SnO2 coverage increased to 95.6%. Such structure-dependent n-p tunable hydrogen sensing behaviour can not only be utilized for the sensitization of the sensing layers but may also provide a simple and cost-effective way for the modulation of the response type of the sensor composed of the MoS2-based 2D materials. © 2023, Science China Press.

Keyword:

molybdenum disulfide tin dioxide 2D materials hydrogen sensor scanning Kelvin probe microscopy

Author Community:

  • [ 1 ] [Tan L.]Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy, Hubei Key Laboratory of Micro- & Nano-electronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan, 430062, China
  • [ 2 ] [Tan L.]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Liu X.]Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy, Hubei Key Laboratory of Micro- & Nano-electronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan, 430062, China
  • [ 4 ] [Yang P.]College of Physics and Electromechanical Engineering, Hubei University of Education, Wuhan, 430205, China
  • [ 5 ] [Li W.]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100124, China
  • [ 6 ] [Yang W.]Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy, Hubei Key Laboratory of Micro- & Nano-electronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan, 430062, China
  • [ 7 ] [Li A.]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100124, China
  • [ 8 ] [Gu H.]Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy, Hubei Key Laboratory of Micro- & Nano-electronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan, 430062, China
  • [ 9 ] [Wang Z.]Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy, Hubei Key Laboratory of Micro- & Nano-electronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan, 430062, China

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Source :

Science China Materials

ISSN: 2095-8226

Year: 2023

Issue: 11

Volume: 66

Page: 4427-4436

8 . 1 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:26

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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