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Author:

Liu, Min (Liu, Min.) | Cai, Ziteng (Cai, Ziteng.) | Liu, Jian (Liu, Jian.) | Wu, Nanjian (Wu, Nanjian.) | Liu, Liyuan (Liu, Liyuan.)

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EI Scopus

Abstract:

This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process. Based on the plasma-wave theory proposed by Dyakonov and Shur, we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser (QCL). Furthermore, we present a fully integrated high-speed 32 × 32-pixel 3.0 THz CMOS image sensor (CIS). The full CIS measures 2.81 × 5.39 mm2 and achieves a 423 V/W responsivity (Rv) and a 5.3 nW integral noise equivalent power (NEP) at room temperature. In experiments, we demonstrate a testing speed reaching 319 fps under continuous-wave (CW) illumination of a 3.0 THz QCL. The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection. © 2023 Chinese Institute of Electronics.

Keyword:

Image processing CMOS integrated circuits Cost effectiveness Terahertz waves Quantum cascade lasers Laser theory

Author Community:

  • [ 1 ] [Liu, Min]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 2 ] [Liu, Min]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 3 ] [Cai, Ziteng]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 4 ] [Cai, Ziteng]Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 5 ] [Liu, Jian]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 6 ] [Liu, Jian]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 7 ] [Wu, Nanjian]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 8 ] [Wu, Nanjian]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 9 ] [Liu, Liyuan]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 10 ] [Liu, Liyuan]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China

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Source :

Journal of Semiconductors

ISSN: 1674-4926

Year: 2023

Issue: 10

Volume: 44

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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