Ultrafast　laser　is　expected　as　a　promising　strategy　for　micro-LEDs　(µ-LEDs)　transfer　due　to　its　inherent　property　of　suppressing　thermal　effects.　However,　its　ultrahigh　peak　power　and　the　unclear　transfer　mechanism　make　its　transfer　quality　and　efficiency　unsatisfactory.　Here,　the　study　reports　the　high-precision　mass　transfer　of　20 µm　fine-pitch　µ-LEDs　via　in　situ　nanoparticles　(NPs)　resonance　enhancement　in　burst　mode　ultraviolet　picosecond　laser　irradiation.　This　technique　suppresses　the　thermal　melting　effect　and　rapid　cooling　behavior　of　plasma　by　temporal　modulation　of　the　burst　mode,　generating　NPs-induced　resonance　enhancement　that　accurately　and　controllable　drives　a　single　unit　up　to　tens　of　thousands　of　µ-LEDs.　The　transfer　of　large　µ-LED　arrays　with　more　than　180　000　chips　is　also　demonstrated,　showing　a　transfer　yield　close　to　99.9%,　a　transfer　speed　of　700　pcs　s−1,　and　a　transfer　error　of　＜±1.2 µm.　The　transferred　µ-LEDs　perform　excellent　optoelectronic　properties　and　enable　reliable　device　operation　regardless　of　complex　strain　environments,　providing　a　reliable　strategy　for　preparing　broader　classes　of　3D　integrated　photonics　devices.　©　2024　Wiley-VCH　GmbH.