High-definition　near-eye　display　technology　has　extremely　close　sight　distance,　placing　a　higher　demand　on　the　size,　performance,　and　array　of　light-emitting　pixel　devices.　Based　on　the　excellent　photoelectric　performance　of　metal　halide　perovskite　materials,　perovskite　light-emitting　diodes　(PeLEDs)　have　high　photoelectric　conversion　efficiency,　adjustable　emission　spectra,　and　excellent　charge　transfer　characteristics,　demonstrating　great　prospects　as　next-generation　light　sources.　Despite　their　potential,　the　solubility　of　perovskite　in　photoresist　presents　a　hurdle　for　conventional　micro/nano　processing　techniques,　resulting　in　device　sizes　typically　exceeding　50　mu　m.　This　limitation　impedes　the　further　downsizing　of　perovskite-based　components.　Herein,　we　propose　a　plane-structured　PeLED　device　that　can　achieve　microscale　light-emitting　diodes　with　a　single　pixel　device　size　＜　2　mu　m　and　a　luminescence　lifetime　of　approximately　3　s.　This　is　accomplished　by　fabricating　a　patterned　substrate　and　regulating　ion　distribution　in　the　perovskite　through　self-doping　effects　to　form　a　PN　junction.　This　breakthrough　overcomes　the　technical　challenge　of　perovskite-photoresist　incompatibility,　which　has　hindered　the　development　of　perovskite　materials　in　micro/nano　optoelectronic　devices.　The　strides　made　in　this　study　open　up　promising　avenues　for　the　advancement　of　PeLEDs　within　the　realm　of　micro/nano　optoelectronic　devices.