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Author:

Zhang, Feng (Zhang, Feng.) | Cui, Ning (Cui, Ning.) | Yang, Jiawei (Yang, Jiawei.) | Mei, Yu (Mei, Yu.) | Fu, Lishan (Fu, Lishan.) | Liu, Yudong (Liu, Yudong.) | Guan, Baolu (Guan, Baolu.)

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EI Scopus SCIE

Abstract:

Thermal crosstalk and current crowding effects are pressing issues that significantly impact the beam quality and efficiency of vertical-cavity surface-emitting laser (VCSEL) arrays. In this paper, by taking advantage of the excellent current transmission characteristics of graphene, what we believe to be a novel VCSEL array based on graphene electrode is designed to realize vertical current injections. The series resistance and self-heating of arrays are reduced by controlling the transport direction of the current, effectively suppressing the thermal crosstalk effect. Furthermore, high array beam quality is obtained by optimizing the current density distribution in active regions. Ultimately, the high-power quasi-single mode emission of VCSEL arrays is achieved by introducing graphene electrodes (Gr-VCSEL array) designs. Compared to traditional VCSEL arrays, the 10 × 10 Gr-VCSEL array demonstrates a 41% reduction in series resistance, a side mode suppression ratio of 32 dB, and a divergence angle around 12 °. This structure simultaneously achieves quasi-single mode emission and effectively suppresses the thermal crosstalk effect, providing a new method for the development of high-beam quality VCSEL arrays. © 2024 Optica Publishing Group.

Keyword:

Graphene Electric resistance Graphite electrodes Electrochemical electrodes Crosstalk Transparent electrodes Surface emitting lasers Laser pulses

Author Community:

  • [ 1 ] [Zhang, Feng]Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Cui, Ning]Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Yang, Jiawei]Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Mei, Yu]Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 5 ] [Fu, Lishan]Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Liu, Yudong]Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
  • [ 7 ] [Guan, Baolu]Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China

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Source :

Optics Express

Year: 2024

Issue: 5

Volume: 32

Page: 8205-8213

3 . 8 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 37

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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