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Author:

Peng, Di (Peng, Di.) | Zeng, Qiaoshi (Zeng, Qiaoshi.) | Lan, Fujun (Lan, Fujun.) | Xing, Zhenfang (Xing, Zhenfang.) | Zeng, Zhidan (Zeng, Zhidan.) | Ke, Xiaoxing (Ke, Xiaoxing.) | Ding, Yang (Ding, Yang.) | Mao, Ho-kwang (Mao, Ho-kwang.)

Indexed by:

EI Scopus SCIE

Abstract:

The recent report of room-temperature superconductivity at near-ambient pressure in nitrogen-doped lutetium hydride (Lu-H-N) by Dasenbrock-Gammon et al. [Nature 615, 244-250 (2023)] has attracted tremendous attention due to its anticipated great impact on technology. However, the results could not be independently reproduced by other groups worldwide in follow-up studies, which elicited intense controversy. Here, we develop a reliable experimental protocol to minimize the extensively concerned extrinsic influences on the sample by starting the reaction from pure lutetium loaded with an H2/N2 gas mixture in a diamond anvil cell under different pressures and temperatures and simultaneously monitoring the entire chemical reaction process using in situ four-probe resistance measurements. Therefore, we could repeatedly reproduce the near-room temperature upsurge of electrical resistance at a relatively early stage of the chemical reaction. However, the mechanism is suggested to be a metal-to-semiconductor/insulator transition associated with the structural modulation in the non-stoichiometric Lu-H-N, rather than superconductivity.

Keyword:

resistance transition high pressure superconductivity lutetium hydride metal-to-semiconductor/insulator transition

Author Community:

  • [ 1 ] [Peng, Di]Chinese Acad Sci, Inst Solid State Phys, Hefei Inst Phys Sci HFIPS, Key Lab Mat Phys, Hefei 230031, Peoples R China
  • [ 2 ] [Peng, Di]Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China
  • [ 3 ] [Peng, Di]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
  • [ 4 ] [Zeng, Qiaoshi]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
  • [ 5 ] [Lan, Fujun]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
  • [ 6 ] [Xing, Zhenfang]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
  • [ 7 ] [Zeng, Zhidan]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
  • [ 8 ] [Ding, Yang]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
  • [ 9 ] [Mao, Ho-kwang]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
  • [ 10 ] [Zeng, Qiaoshi]Shanghai Adv Res Phys Sci SHARPS, Shanghai Key Lab Mat Frontiers Res Extreme Environ, Shanghai 201203, Peoples R China
  • [ 11 ] [Mao, Ho-kwang]Shanghai Adv Res Phys Sci SHARPS, Shanghai Key Lab Mat Frontiers Res Extreme Environ, Shanghai 201203, Peoples R China
  • [ 12 ] [Xing, Zhenfang]Jilin Univ, Inst Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
  • [ 13 ] [Ke, Xiaoxing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Zeng, Qiaoshi]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China;;[Mao, Ho-kwang]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China;;[Zeng, Qiaoshi]Shanghai Adv Res Phys Sci SHARPS, Shanghai Key Lab Mat Frontiers Res Extreme Environ, Shanghai 201203, Peoples R China;;[Mao, Ho-kwang]Shanghai Adv Res Phys Sci SHARPS, Shanghai Key Lab Mat Frontiers Res Extreme Environ, Shanghai 201203, Peoples R China;;

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Source :

NATIONAL SCIENCE REVIEW

ISSN: 2095-5138

Year: 2023

Issue: 7

Volume: 11

2 0 . 6 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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