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Author：

Jin, S. (Jin, S..) | Wang, Y. (Wang, Y..) | Zheng, H. (Zheng, H..) | Dong, S. (Dong, S..) | Han, K. (Han, K..) | Wang, Z. (Wang, Z..) | Wang, G. (Wang, G..) | Jiang, X. (Jiang, X..) | Wang, X. (Wang, X..) | Hong, J. (Hong, J..) | Huang, H. (Huang, H..) | Zhang, Y. (Zhang, Y..) | Xia, T.-L. (Xia, T.-L..)

Indexed by：

EI Scopus SCIE

Abstract：

The　discovery　of　room-temperature　ferromagnetism　in　van　der　Waals　(vdW)　materials　opens　new　avenues　for　exploring　low-dimensional　magnetism　and　its　applications　in　spintronics.　Recently,　the　observation　of　the　room-temperature　topological　Hall　effect　in　the　vdW　ferromagnet　Fe3GaTe2　suggests　the　possible　existence　of　room-temperature　skyrmions,　yet　skyrmions　have　not　been　directly　observed.　In　this　study,　real-space　imaging　was　employed　to　investigate　the　domain　evolution　of　the　labyrinth　and　skyrmion　structure.　First,　Néel-type　skyrmions　can　be　created　at　room　temperature.　In　addition,　the　influence　of　flake　thickness　and　external　magnetic　field　(during　field　cooling)　on　both　labyrinth　domains　and　the　skyrmion　lattice　is　unveiled.　Due　to　the　competition　between　magnetic　anisotropy　and　dipole　interactions,　the　specimen　thickness　significantly　influences　the　density　of　skyrmions.　These　findings　demonstrate　that　Fe3GaTe2　can　host　room-temperature　skyrmions　of　various　sizes,　opening　up　avenues　for　further　study　of　magnetic　topological　textures　at　room　temperature.　©　2024　American　Chemical　Society.

Keyword：

magnetic domain van der Waals magnet Fe3GaTe2 magnetic force microscope

Author Community：

  • [ 1 ] [Jin S.]School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 2 ] [Wang Y.]Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
  • [ 3 ] [Wang Y.]Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
  • [ 4 ] [Zheng H.]School of Automation, Beijing Institute of Technology, Beijing, 100081, China
  • [ 5 ] [Dong S.]Advanced Research Institute of Multidisciplinary Science and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 6 ] [Han K.]Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
  • [ 7 ] [Han K.]Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
  • [ 8 ] [Wang Z.]Beijing National State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 9 ] [Wang G.]School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 10 ] [Jiang X.]School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 11 ] [Wang X.]School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 12 ] [Hong J.]School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 13 ] [Huang H.]Advanced Research Institute of Multidisciplinary Science and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 14 ] [Zhang Y.]Beijing National State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 15 ] [Xia T.-L.]Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
  • [ 16 ] [Xia T.-L.]Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
  • [ 17 ] [Wang X.]School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China

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Source ：

Nano Letters

ISSN： 1530-6984

Year： 2024

Issue： 18

Volume： 24

Page： 5467-5473

1 0 . 8 0 0

JCR@2022

Cited Count：

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SCOPUS Cited Count： 13

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

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30 Days PV： 6

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