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Author:

Jin, S. (Jin, S..) | Wang, Z. (Wang, Z..) | Dong, S. (Dong, S..) | Wang, Y. (Wang, Y..) | Han, K. (Han, K..) | Wang, G. (Wang, G..) | Deng, Z. (Deng, Z..) | Jiang, X. (Jiang, X..) | Zhang, Y. (Zhang, Y..) | Huang, H. (Huang, H..) | Hong, J. (Hong, J..) | Wang, X. (Wang, X..) | Xia, T. (Xia, T..) | Cheong, S.-W. (Cheong, S.-W..)

Indexed by:

Scopus SCIE

Abstract:

Motivated by advances in spintronic devices, extensive explorations are underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of an intrinsic skyrmion state in the van der Waals ferromagnet Fe3GaTe2. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe3GaTe2 flakes. The ordering of skyrmion state is further analyzed. Our results suggest Fe3GaTe2 emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices. © 2024 The Authors

Keyword:

Fe3GaTe2 van der Waals magnet Skyrmion lattice

Author Community:

  • [ 1 ] [Jin S.]School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 2 ] [Wang Z.]Beijing National State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 3 ] [Dong S.]Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 4 ] [Wang Y.]Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
  • [ 5 ] [Wang Y.]Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
  • [ 6 ] [Han K.]Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
  • [ 7 ] [Han K.]Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
  • [ 8 ] [Wang G.]School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 9 ] [Deng Z.]School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 10 ] [Jiang X.]School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 11 ] [Jiang X.]Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City, 315211, China
  • [ 12 ] [Zhang Y.]Beijing National State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 13 ] [Huang H.]Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 14 ] [Hong J.]School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
  • [ 15 ] [Wang X.]School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 16 ] [Xia T.]Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
  • [ 17 ] [Xia T.]Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
  • [ 18 ] [Cheong S.-W.]Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, 08854, NJ, United States
  • [ 19 ] [Wang X.]School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China

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Source :

Journal of Materiomics

ISSN: 2352-8478

Year: 2025

Issue: 2

Volume: 11

9 . 4 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 10

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