The　influence　of　external　strain　on　the　gate　leakage　current　of　AlGaN/GaN　high-electron-mobility　transistors　was　studied.　The　magnitude　of　the　leakage　current　increased　by　39%　under　0.1%　tensile　strain　but　decreased　by　23%　under　−0.1%　compressive　strain.　The　leakage　current　obeyed　the　Poole-Frenkel　conduction　mechanism,　demonstrating　a　decrease/increase　in　the　barrier　height　for　electron　emission　from　the　trap　state　into　the　continuum　dislocation　state.　Furthermore,　the　magnitude　of　critical　reverse　stressing　voltage　for　the　onset　of　degradation　induced　by　the　inverse　piezoelectric　effect　became　lower/higher　under　tensile/compressive　strain　compared　with　that　of　the　initial　state,　which　was　attributed　to　the　modification　of　the　total　stress　in　the　film.　In　addition,　using　the　transient　current　method,　it　was　established　that　the　detrapping　time　constant　for　the　traps　in　the　AlGaN　barrier　increased　as　a　result　of　the　tensile　strain,　which　is　ascribed　to　movement　of　the　dislocation　level　away　from　the　conduction　band.　©　2024　Author(s).