With　the　size　of　high-performance　electronic　device　decreasing　(down　to　nanoscale),　and　the　accompanying　heat　dissipation　becomes　a　big　problem　due　to　its　extremely　high　heat　generation　density.　To　tackle　the　ever-demanding　heat　dissipation　requirement,　intensive　work　has　been　done　to　develop　techniques　for　chip-level　cooling.　Among　the　techniques　reported　in　the　literature,　liquid　cooling　appears　to　be　a　good　candidate　for　cooling　high-performance　electronic　devices.　However,　when　the　device　size　is　reduced　to　the　sub-micro　or　nanometer　level,　the　thermal　resistance　on　the　solid-liquid　interface　cannot　be　ignored　in　the　heat　transfer　process.　Usually,　the　interfacial　thermal　transport　can　be　enhanced　by　using　nanostructures　on　the　solid　surface　because　of　the　confinement　effect　of　the　fluid　molecules　filling　up　the　nano-grooves　and　the　increase　of　the　solid-liquid　interfacial　contact　area.　However,　in　the　case　of　weak　interfacial　couplings,　the　fluid　molecules　cannot　enter　into　the　nano-grooves　and　the　interfacial　thermal　transport　is　suppressed.　In　the　present　work,　the　heat　transfer　system　between　two　parallel　metal　plates　filled　with　deionized　water　is　investigated　by　molecular　dynamics　simulation.　Electronic　charges　are　applied　to　the　upper　plate　and　lower　plate　to　create　a　uniform　electric　field　that　is　perpendicular　to　the　surface,　and　three　types　of　nanostructures　with　varying　size　are　arranged　on　the　lower　plate.　It　is　found　that　the　wetting　state　at　the　solid-liquid　interface　can　change　from　Cassie　state　into　Wenzel　state　with　strength　of　the　electric　field　increasing.　Owing　to　the　transition　from　the　dewetting　state　to　wetting　state　(from　Wenzel　to　Cassie　wetting　state),　the　Kapitza　length　can　be　degraded　and　the　solid-liquid　interfacial　heat　transfer　can　be　enhanced.　The　mechanism　of　the　enhancing　hart　transfer　is　discussed　based　on　the　calculation　of　the　number　density　distribution　of　the　water　molecules　between　the　two　plates.　When　the　charge　is　further　increased,　electrofreezing　appears,　and　a　solid　hydrogen　bonding　network　is　formed　in　the　system,　resulting　in　the　thermal　conductivity　increasing　to　1.2　W/(m　center　dot　K)　while　the　thermal　conductivity　remains　almost　constant　when　the　electric　charge　continues　to　increase.