There　is　a　strong　motivation　to　develop　E-mode　p-channel　field-effect　transistor　(p-FET)　on　the　E-mode　p-GaN　gate　HEMT　(EPH)　platform　to　enable　complementary　logic　(CL)　circuits　and　power　integrated　circuits　(PICs).　However,　the　p-FET　on　such　platform　often　presents　a　low　current　density　(1-5　mA/mm).　A　major　cause　is　the　low　ionization　rate　of　acceptors　in　p-GaN.　This　work　demonstrates　a　polarization　engineering　technique　that　aims　to　enhance　the　ionization　of　acceptors　in　p-GaN　layer.　By　inserting　a　thin　AlN　layer　(similar　to　1.5　nm)　into　the　p-GaN,　the　polarization　field　of　AlN　pushes　down　the　energy　band　of　the　lower　p-GaN　layer,　leading　to　enhanced　ionization　of　acceptors.　The　AlN　layer　also　creates　an　energy　well　above　AlN　for　holes,　resulting　in　modulation　doping　effect　and　enhanced　two-dimensional　hole　gas　(2DHG)　above　AlN.　The　fabricated　p-FET　with　LG　=　2　mu　m　exhibits　a　n　E-mode　operation　with　V-th　=　-0.8　V.　A　low　R-ON　of　1.1　k　ohm　center　dot　mm　is　obtained.　The　I-ON/I-OFF　is　over　106.　The　Imax　is　10.8　mA/mm,　which　is　among　the　largest　values　in　literature　for　E-mode　GaN　p-FETs　on　the　EPH　platform.　Finally,　an　E-mode　n-channel　p-GaN　gate　HEMT　is　demonstrated　on　the　same　epitaxial　wafer,　validating　the　capability　of　the　platform　for　CL　and　PICs.