Ferrimagnets　have　attracted　increasing　attention　in　spintronics　due　to　the　possibility　of　easy　manipulation　by　magnetic　or　electric　fields.　We　report　the　anomalous　Hall　effect　(AHE)　and　spin　Hall　magnetoresistance　(SMR)　in　ferrimagnetic　Mn1.77Co0.44V0.83Al0.96　(MCVA)　films,　which　are　sensitive　to　the　disorder　of　the　film.　As　the　thickness　of　the　film　increases,　the　film　gradually　transitions　from　the　disordered　to　the　ordered　state,　resulting　in　the　anomalous　Hall　resistivity　changes　from　negative　to　positive.　By　separating　their　distinct　the　contributions　to　the　AHE,　we　demonstrate　that　the　thickness　dependence　originates　from　the　competition　between　the　skew　scattering　contribution　and　the　sum　of　the　side　jump　and　intrinsic　contributions.　Moreover,　under　the　effect　of　disorder,　the　dependence　of　the　SMR　ratio　on　thickness　is　more　complex,　and　a　critical　level　of　disorder　may　lead　to　a　sharp　decrease　in　the　SMR　ratio.　Our　research　reveals　the　impact　of　disorder　on　spin　transport　and　provides　a　pathway　for　the　design　of　ferrimagnetic　Heusler　alloy-based　spintronic　devices.