Modern　optoelectronic　devices　trend　toward　greater　flexibility,　wearability,　and　multifunctionality,　demanding　higher　standards　for　fabrication　and　operation　temperatures.　Vanadium　dioxide　(VO2),　with　its　metal-insulator　transition　(MIT)　at　68　degrees　C,　serves　as　a　crucial　functional　layer　in　many　optoelectronic　devices.　However,　VO2　usually　needs　to　grow　at　＞450　degrees　C　in　an　oxygen-containing　atmosphere　and　to　function　across　its　MIT　temperature,　leading　to　low　compatibility　with　most　optoelectronic　devices,　especially　on　flexible　substrates.　In　this　work,　we　report　a　layer-by-layer　transfer　method　of　wafer-scale　tungsten-doped　VO2　films,　which　enables　sequential　integration　of　the　VO2　films　with　low　MIT　temperatures　(down　to　40　degrees　C)　onto　arbitrary　substrates.　Notably,　by　stacking　multiple　VO2　films　with　different　doped　levels,　a　quasi-gradient-doped　VO2　architecture　can　be　achieved,　effectively　broadening　the　MIT　temperature　window　and　reducing　the　hysteresis　of　VO2.　These　integrated　VO2　films　find　a　wide　scope　of　applications　in　flexible　temperature　indicator　strips,　infrared　camouflage　devices,　nonreciprocal　ultrafast　light　modulators,　and　smart　photoactuators.　Our　work　promotes　the　development　of　more　flexible　and　tunable　optoelectronic　devices　integrated　with　VO2.