Traditional　three-dimensional　(3D)　suffer　from　the　surface　roughness　is　large　and　the　suspension　bond　is　increased　when　the　structure　is　thinned　to　a　certain　extent,　which　seriously　affects　the　semiconductor　performance.　Lower　dimensional　two-dimensional　(2D)　materials　show　their　excellent　properties,　opening　up　a　new　field　for　the　research　of　semiconductor　processes　and　devices.　Graphene　as　a　representative　2D　material,　has　a　stable　lattice　structure,　only　one　carbon　atom　thickness,　high　flexibility,　high　transparency　and　high　mobility,　the　mobility　is　much　higher　than　that　of　traditional　3D　materials,　up　to　200,000　cm2·V-1·s-1.　Graphene　is　considered　to　be　the　ideal　channel　material　for　manufacturing　high-speed　field-effect　transistors　(FETs).　In　this　paper,　graphene　were　grown　by　plasma-enhanced　chemical　vapor　deposition　(PECVD)　with　transfer-free.　And　graphene　FETs　(GFETs)　made　by　transfer-free　graphene　on　GaN-based　substrate　were　designed,　fabricated　and　measured.　The　method　of　growing　graphene　with　plasma　enhanced　and　metal　assistance　has　the　advantages　of　fast　growth　rate,　low　temperature,　complete　film　coverage,　less　doping,　and　enables　in-situ　and　patterned　growth　on　the　device　directly,　which　has　a　very　promising　research　prospect.　The　thin-film　morphology　of　graphene　is　compatible　with　current　semiconductor　processes　and　can　extend　from　GFETs　to　other　2D　material　transistors,　ensuring　good　repeatability　and　scalability.　Meanwhile,　the　GFETs　fabricated　on　GaN　makes　it　possible　to　drive　LEDs　on　the　same　substrate　in　the　future.　©2024　IEEE.