The　lattice　structure　and　electronic　structure　of　the　Ca　doped　wurtzite　type　ZnO　have　been　systematically　investigated　by　the　ab-initial　calculations　based　on　the　density　functional　theory　calculations　under　the　generallized　gradient　approximation,　the　electrical　properties　have　been　analyzed　thereafter.　The　results　show　that　the　lattice　decreases　for　the　doped　system.　The　Ca　doped　wurtzite　type　ZnO　is　semiconductor　with　approximate　1.5　eV　direct　band　gap.　The　energy　bands　for　the　doped　system　near　Fermi　level　are　composed　by　Ca　s,　Ca　p,　Zn　p　and　O　p　state　electrons,　the　valence　bands　are　mainly　composed　by　the　p　state　electrons.　There　are　strong　interactions　between　Ca　s,　Zn　p　and　the　O　p　electrons.　The　carriers　near　the　Fermi　level　show　increased　concentration,　lowered　velocity　and　enhanced　effective　mass.　The　carrier　transport　is　accomplished　by　Ca　s,　Zn　p　and　the　O　p　electrons　between　valance　bands　and　conduction　bands.　The　Ca　doped　system　should　have　higher　conductivity　and　Seebeck　coefficient　as　well　as　improved　electrical　performance.