The　integration　of　three-beam　laser　interference　lithography　(TBLIL)　and　Metal-Assisted　Chemical　Etching　(MACE)　is　a　novel　approach　to　enhance　the　electrical　and　antireflection　properties　of　silicon　micro/nanostructures　(SiMNs)　for　advanced　optoelectronic　applications.　This　study　explored　the　fabrication,　theoretical　modeling,　and　performance　evaluation　of　SiMNs　with　enhanced　light　absorption,　electrical　conductivity,　and　reduced　surface　reflectance.　A　three-dimensional　finite-difference　time-domain　(FDTD)　method　was　employed　to　simulate　and　optimize　the　surface　texture　design　for　improved　light　absorption.　The　electrical　and　optical　characteristics　of　the　fabricated　SiMNs　were　thoroughly　examined.　The　simulated　and　experimental　results　exhibited　comparable　trends.　The　integration　of　TBLIL　and　MACE　not　only　offers　a　precise　and　scalable　method　for　structuring　SiMNs,　but　also　provides　valuable　insights　for　the　development　of　high-efficiency　optoelectronic　devices,　positioning　these　arrays　as　promising　candidates　for　next-generation　technologies.