This　article　investigates　the　single　event　effects　(SEEs)　in　SiC　MOSFETs　integrated　with　a　junction　barrier　diode　[MOSFET　integrated　with　JBS　structure　(JMOS)].　During　irradiation　experiments,　JMOS　exhibited　drain-to-source　leakage　current　degradation　and　ultimately　experienced　burnout　as　the　drain　voltage　increased.　However,　the　gate　leakage　current　remained　almost　unchanged　throughout　the　irradiation　process　but　increased　under　the　post-irradiation　gate　stress　(PIGS)　test.　The　anatomical　analysis　demonstrated　that　the　deformation　of　ohmic　contact　metal　and　the　generation　of　gate　oxide　voids　in　the　active　region　were　the　causes　of　failures.　By　employing　Sentaurus　technical　computer-aided　design　(TCAD)　simulation　tools,　hot　spots　were　concentrated　at　ohmic　metal　corners　when　the　heavy　ions　struck　in　the　middle　of　the　JFET　region　in　the　junction　barrier　Schottky　diode　(JBS)　structure.　In　addition,　a　remarkable　increase　in　the　maximum　oxide　electric　field　strength　was　observed　when　the　injection　position　was　located　in　the　middle　of　the　JFET　region,　which　led　to　the　potential　damage　of　the　oxide　layer,　resulting　in　the　final　failure　under　the　PIGS　test.　Therefore,　different　from　conventional　SiC　JBS　and　MOSFET　devices,　JMOS　exhibited　a　unique　failure　mechanism　arising　from　the　synergistic　interaction　between　both　JBS　and　MOSFET　cell　structures.