In　this　work,　we　grew　transfer-free　graphene-like　thin　films　(GLTFs)　directly　on　gallium　nitride　(GaN)/sapphire　light-emitting　diode　(LED)　substrates.　Their　electrical,　optical　and　thermal　properties　were　studied　for　transparent　electrode　applications.　Ultrathin　platinum　(2　nm)　was　used　as　the　catalyst　in　the　plasma-enhanced　chemical　vapor　deposition　(PECVD).　The　growth　parameters　were　adjusted　such　that　the　high　temperature　exposure　of　GaN　wafers　was　reduced　to　its　minimum　(deposition　temperature　as　low　as　600　degrees　C)　to　ensure　the　intactness　of　GaN　epilayers.　In　a　comparison　study　of　the　Pt-GLTF　GaN　LED　devices　and　Pt-only　LED　devices,　the　former　was　found　to　be　superior　in　most　aspects,　including　surface　sheet　resistance,　power　consumption,　and　temperature　distribution,　but　not　in　optical　transmission.　This　confirmed　that　the　as-developed　GLTF-based　transparent　electrodes　had　good　current　spreading,　current　injection　and　thermal　spreading　functionalities.　Most　importantly,　the　technique　presented　herein　does　not　involve　any　material　transfer,　rendering　a　scalable,　controllable,　reproducible　and　semiconductor　industry-compatible　solution　for　transparent　electrodes　in　GaN-based　optoelectronic　devices.