Van　der　Waals　(vdW)　layered　GeTe-Sb2Te3　superlattices　(GST-SL)　have　attracted　enormous　attentions　due　to　the　ultralow　power　consumption　for　nonvolatile　phase　change　memory.　In　this　paper,　effects　of　biaxial　strain　on　interfacial　intermixing　and　local　structures　in　strain　engineered　GST-SL　were　studied.　Highly　(0　0　l)　textured　GST-SL　with　thickness-varied　Sb2Te3　sublayers　were　fabricated　by　magnetron　sputtering　and　investigated　with　multiple　analyses　on　surfaces　and　interfaces.　The　appearance　of　Ge-Sb-Te　alloys　indicated　the　interfacial　Ge/Sb　intermixing　in　strain　engineered　GST-SL,　which　actually　were　composed　of　Sb2Te3　quintuple　layers,　Ge-Sb-Te　vdW　layers　and　isolated　GeTe　bilayers.　Grazing　incidence　x-ray　diffraction　(GID)　and　x-ray　photoelectron　spectroscopy　(XPS)　results　revealed　that　biaxial　strain　not　only　facilitated　the　interfacial　intermixing,　but　also　caused　the　reconfiguration　of　Ge-Sb-Te　vdW　layers.　Raman　spectra　indicated　that　vertical　and　in-plane　vibrations　of　GeTe　layers　were　not　affected　by　the　interfacial　intermixing　and　the　newly-formed　Ge-Sb-Te　layers　had　similar　vibration　characteristics　as　that　of　GeTe　layers.　A　modified　switching　mechanism　of　GST-SL,　relating　to　both　the　amorphous-crystalline　phase　transition　of　GeTe　and　Ge-Sb-Te　layers　incorporated　into　the　Sb2Te3　matrix,　was　then　presented.　The　present　studies　shed　new　light　on　strain　engineering　for　GST-SL　and　indicate　their　potential　optoelectronic　applications.