The　indium-tin　oxide　(ITO)　films　were　deposited　by　reactive　DC　magnetron　sputtering　on　glass　substrate.　The　impacts　of　the　film　growth　conditions,　such　as　the　oxygen　flow　rate,　pressure,　sputter　power,　deposition　rate,　and　substrate　temperature,　on　the　microstructures,　electrical　and　optical　properties　of　the　ITO　films　were　evaluated.　The　ITO　films,　to　be　used　as　the　antireflection　layer,　electrode　coatings　of　the　solar　cell,　were　grown　under　the　following　optimized　conditions:　oxygen　flow　rate　of　0.2　ml/min,　a　pressure　of　3　Pa,　a　sputtering　current　of　0.2　A,　and　its　resistivity　and　transmittance　(550　nm)　were　found　to　be　3.7×10-3　Ω·cm,　and　93.3%,　respectively.　The　solar　cells,　fabricated　with　the　ITO/n+-nc-Si:H/i-nc-Si:H/p-c-Si/Ag　structure,　possess　the　optimized　specifications,　including　an　open　circuit　voltage　Voc　of　534.7　mV,　a　short-circuit　current　Isc　of　49.24　mA(3　cm2),　and　a　fill　factor　FF　of　0.4228.