Study on the small signal modulation characteristic of internal-contact oxide-confined vertical-cavity surface-emitting lasers - Details

Author：

Wang, Tongxi (Wang, Tongxi.) | Guo, Xia (Guo, Xia.) | Guan, Baolu (Guan, Baolu.) | Shen, Guangdi (Shen, Guangdi.)

Indexed by：

EI Scopus PKU CSCD

Abstract：

A　rate　equation　model　of　multi-quantum　wells　vertical-cavity　surface-emitting　laser　(VCSEL)　is　presented　after　theoretical　analysis.　The　effects　of　photon　density　and　the　carrier　capture-escape-tunnel　time　on　the　frequency　response　of　VCSEL　are　simulated　by　the　small　signal　analysis.　The　results　both　of　simulation　and　experiment　show　that　the　modulation　bandwidth　of　VCSEL　is　broadened　with　the　power　increasing.　In　addition,　we　simulate　the　small　signal　frequency　response　of　the　parasitic　circuit　of　internal-contact　oxide-confined　VCSEL　after　analyzing　its　parasitic　parameters.

Keyword：

Semiconductor quantum wells Quantum well lasers Modulation Laser pulses Frequency response Surface emitting lasers

Author Community：

[ 1 ] [Wang, Tongxi]Beijing Photoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Guo, Xia]Beijing Photoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Guan, Baolu]Beijing Photoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Shen, Guangdi]Beijing Photoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124, China