AlGaInP LEDs with surface anti-reflecting structure - Details

Author：

Chen, Yixin (Chen, Yixin.) | Shen, Guangdi (Shen, Guangdi.) | Li, Jianjun (Li, Jianjun.) | Han, Jinru (Han, Jinru.) | Xu, Chen (Xu, Chen.) (Scholars：徐晨)

Indexed by：

EI Scopus CSCD

Abstract：

A　kind　of　AlGaInP　light　emitting　diode　(LED)　with　surface　anti-reflecting　structure　has　been　introduced　to　solve　the　problems　of　low　light　efficiency　and　restricted　luminous　intensity.　The　new　structure　can　be　demonstrated　theoretically　and　experimentally,　and　LEDs　with　the　new　structure　have　higher　on-axis　luminous　intensity　and　larger　saturation　current　than　conventional　LEDs　and　LEDs　with　ITO　film　only,　which　is　caused　by　higher　external　quantum　efficiency　and　also　higher　internal　quantum　efficiency.　The　new　LEDs　are　especially　suitable　for　working　at　large　injected　currents.　©　2009　Chinese　Institute　of　Electronics.

Keyword：

Surface structure ITO glass Semiconductor quantum dots Quantum efficiency Physical optics Light emitting diodes

Author Community：

[ 1 ] [Chen, Yixin]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Li, Jianjun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Han, Jinru]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Xu, Chen]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China