The　stress　distribution　in　GaAs-AlGaAs　epitaxial　structure　was　displayed　by　electron　backscatter　diffraction　(EBSD)　technique　with　high　spacial　resolution　of　30-40　nm.　The　measuring　parameters,　including　image　quality　IQ,　Hough　peak　of　Kikuchi　patterns,　crystal　misorientations　and　local　rotations,　etc.,　were　treated　as　stress　sensitive　parameters　to　analyze　strain　states　in　periodically　epitaxial　GaAs-AlGaAs　layers.　The　micro-sized　strained　regions　were　distinguished　by　the　fast　Fourier　transform　(FFT)　and　the　intensity　calculation.