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Author：

Han, Jun (Han, Jun.) | Xing, Yan-Hui (Xing, Yan-Hui.) | Li, Jian-Jun (Li, Jian-Jun.) | Deng, Jun (Deng, Jun.) | Yu, Xiao-Dong (Yu, Xiao-Dong.) | Lin, Wei-Zhi (Lin, Wei-Zhi.) | Liu, Ying (Liu, Ying.) | Shen, Guang-Di (Shen, Guang-Di.)

Indexed by：

EI Scopus PKU CSCD

Abstract：

The　AlGaInP　LED　with　two　active　regions　was　designed　and　grown　by　MOCVD.　Two　AlGalnP　active　regions　were　connected　by　a　heavily　doping　reversed-biased　tunnel　junction.　At　20　mA　injection　current,　the　LED　main　wavelength　is　623nm,　peak　wave　length　is　633　nm,　the　forward　voltage　is　4.16　V,　and　the　output　light　intensity　is　163　mcd.

Keyword：

Semiconducting gallium compounds Semiconductor growth Semiconducting aluminum compounds Semiconducting indium compounds Metallorganic chemical vapor deposition Doping (additives) Tunnel junctions Light emitting diodes

Author Community：

  • [ 1 ] [Han, Jun]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Xing, Yan-Hui]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Li, Jian-Jun]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Deng, Jun]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Yu, Xiao-Dong]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Lin, Wei-Zhi]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Liu, Ying]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 8 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address：

Email：


hanjun@bjut.edu.cn
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Source ：

Journal of Optoelectronics Laser

ISSN： 1005-0086

Year： 2008

Issue： 5

Volume： 19

Page： 591-594

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 7

Affiliated Colleges：

信息科学技术学院 本学院/部未明确归属的数据

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