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Author:

Tian, Yongtao (Tian, Yongtao.) | Zhang, Zhihua (Zhang, Zhihua.) | Guo, Weiling (Guo, Weiling.) | Shen, Guangdi (Shen, Guangdi.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

A method for calculating the extraction efficiency of light-emitting diodes is offered. The determinants of the extraction efficiency of tunneling-regenerated double-active-region (TRDAR) AlGaInP light-emitting diodes are investigated, including light escaping through the top surface, light loss due to absorption of diode bulk, light loss due to absorption of substrate and anode. The extraction efficiency of tunneling-regenerated double-active-region AlGaInP light-emitting diodes is calculated. The extraction efficiency of 5.24% and 9.16% for the top active region and the bottom active region are obtained respectively in TRDAR LED chips.

Keyword:

Substrates Semiconducting gallium compounds Semiconducting aluminum compounds Light emitting diodes Tunnel junctions Light absorption Semiconducting indium phosphide

Author Community:

  • [ 1 ] [Tian, Yongtao]College of Physics Science and Technology, University of Petroleum (East China), Dongying 257061, China
  • [ 2 ] [Tian, Yongtao]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Zhang, Zhihua]College of Information and Control Engineering, University of Petroleum (East China), Dongying 257061, China
  • [ 4 ] [Guo, Weiling]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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Source :

Research and Progress of Solid State Electronics

ISSN: 1000-3819

Year: 2006

Issue: 1

Volume: 26

Page: 80-84

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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