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Author:

Tian, Yongtao (Tian, Yongtao.) | Zhang, Zhihua (Zhang, Zhihua.) | Guo, Weiling (Guo, Weiling.) | Shen, Guangdi (Shen, Guangdi.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

The operating principal of tunneling-regenerated-double-active-region (TRDAR) AlGalnP light-emitting diodes is analyzed on-axis luminous intensity is tested under different injected current and the relationship between on-axis luminous intensity and injected current is offered in this paper. The emitting peak wavelength of TRDAR AlGalnP light-emitting diodes is 620 nm at 20 mA. The average on-axis luminous intensity of TRDAR AlGalnP light-emitting diodes lamps with 15° viewing angle is 5.5 cd. Its life test is carried, and the lifetime of TRDAR AlGalnP light-emitting diodes has exceeded 1.2 × 105 hours under conditions of 30 mA direct current and 25°C ambient temperature.

Keyword:

Semiconducting gallium compounds Semiconducting aluminum compounds Light emitting diodes Temperature Tunnel junctions Reliability Semiconducting indium phosphide

Author Community:

  • [ 1 ] [Tian, Yongtao]College of Physics Science and Technology, University of Petroleum (East China), Dongying 257061, China
  • [ 2 ] [Zhang, Zhihua]College of Information and Control Engineering, University of Petroleum (East China), Dongying 257061, China
  • [ 3 ] [Guo, Weiling]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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Source :

Research and Progress of Solid State Electronics

ISSN: 1000-3819

Year: 2006

Issue: 2

Volume: 26

Page: 205-208

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

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