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Abstract:
The self-assembled nanostructure metal is proposed as the masks, then the surface of AlGaInP light emitting diodes (LED) is dry-etched to be roughened. The roughened surfaces increase the light-output. The light intensity and light power of roughened AlGaInP LEDs increase by 27% and 12.6% respectively compared with normal AlGaInP LEDs. By optimizing the period and separation of metal masks, the light-output will be further increased.
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Journal of Optoelectronics Laser
ISSN: 1005-0086
Year: 2008
Issue: 10
Volume: 19
Page: 1301-1303
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 8
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