Influence of plasma treatment on performances of the GaN-based light-emitting diodes - Details

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Abstract：

The　authors　investigated　the　effects　of　plasma　treatment　on　ICP　etch　damage.　The　GaN-based　LED　was　put　in　PECVD　chamber　at　different　temperature　and　treated　by　N2,　N2O　and　NH3　plasma　under　different　RF　power.　It　is　observed　that,　in　the　case　of　100C　and　20　W　RF　power,　the　optical　and　electrical　characteristics　of　GaN-LEDs　were　improved　after　the　N2O　plasma　treatment,　the　optical　and　electrical　characteristics　of　GaN-LEDs　were　improved　slightly　after　the　N2　plasma　treatment,　while　that　of　the　GaN-LEDs　were　significantly　degraded　after　the　NH3　plasma　treatment.

Keyword：

III-V semiconductors Ammonia Optoelectronic devices Plasma applications Wide band gap semiconductors Semiconductor materials Gallium nitride Light emitting diodes

Author Community：

[ 1 ] [Da, Xiao-Li]Beijing Optoelectronic Technology Lab., College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Lab., College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Jian-Ping]Beijing Optoelectronic Technology Lab., College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Niu, Nan-Hui]Beijing Optoelectronic Technology Lab., College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Zhu, Yan-Xu]Beijing Optoelectronic Technology Lab., College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Liang, Ting]Beijing Optoelectronic Technology Lab., College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Zou, De-Shu]Beijing Optoelectronic Technology Lab., College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Guo, Xia]Beijing Optoelectronic Technology Lab., College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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Source ：

Journal of Beijing University of Technology

ISSN： 0254-0037

Year： 2008

Issue： 7

Volume： 34

Page： 682-687

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 8

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