We　studied　the　relationship　between　the　RF　power,　the　chamber　pressure　and　the　film　stress　for　deposited　the　silicon　nitride　film　by　Plasma　Enhance　Chemical　Vapor　Deposition　(PECVD).　It　shows　that　even　if　using　the　RF　power(13.　56　MHz)　as　the　excitation　of　plasma,　the　compressive　silicon　nitride　film　can　be　obtained　easily.　The　low　stress　film　shows　the　good　uniformity　through　the　mapping　measurement　by　variable　angle　spectroscopic　elhpsometry　(VASE).　The　silicon　nitride　films　chemical　composition　was　analyzed　by　FTIR　(Fourier　Trans-form　Infrared　Spectroscopy).