An　Al0.6Ga0.4As/AlAs　distributed　Bragg　reflector　(DBR)　for　a　630　nm　peak　wavelength　high　brightness　AlGaInP　LED　is　studied.　The　reflective　characteristics　of　normal　DBR　and　coupled　DBR　are　simulated　using　the　interference　matrix　model.　The　simulated　DBR　structures　and　corresponding　LEDs　are　grown　by　LP-MOCVD.　The　simulated　and　experimental　results　both　indicate　that　the　coupled　DBR　can　remarkably　increase　the　light　extraction　efficiency　of　an　AlGaInP　LED.　The　non-encapsulated　LED　with　the　coupled　DBR　performs　well,　with　2.3　mW　output　optical　power,　12　lm/W　luminous　efficiency,　and　5.6%　external　quantum　efficiency,　with　an　improvement　of　35%　over　that　with　a　normal　DBR.