Novel method to determine the failure rate using process-stress accelerated test - Details

Author：

Indexed by：

EI Scopus PKU CSCD

Abstract：

A　method　is　presented　that　enables　rapid　determination　of　failure　rate　and　lifetime　distribution　for　semiconductor　devices　based　on　the　study　of　process-stress　accelerated　life　test.　Process-stress　accelerated　test　is　applied　to　determine　the　failure　rate　in　the　method,　and　the　lifetime　distribution　and　failure　rate　can　be　determined　based　on　evaluation　of　the　lifetime.　To　demonstrate　the　application　of　the　method,　it　has　been　applied　to　a　kind　of　mature　products,　3DG130.　A　process-stress　accelerated　test　was　constructed　in　the　temperature　range　of　160-310°C.　Then　the　related　reliable　parameters,　such　as　lifetime　and　failure　rate　were　figured　out　utilizing　the　model.　Experimental　results　are　in　agreement　with　that　in　the　literature,　proving　that　the　method　is　effective.

Keyword：

Failure (mechanical) Acceleration Semiconductor devices

Author Community：

[ 1 ] [Guo, Chunsheng]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Li, Xiuyu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Zhu, Chunjie]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Ma, Weidong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Lu, Changzhi]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Li, Zhiguo]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address：

Email：

guocs@emails.bjut.edu.cn

Show more details

Related Keywords：

Study on the chip-level thermal non-uniformity evaluation of semiconductor devices
2009，2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Research on failure analysis and method of GaN-based HEMTs
2017，14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017
Shaking table test on seismic failure characteristics of subway station structure at liquefiable ground
2012，Journal of Building Structures
Shaking table model test and numerical analysis on dynamic failure characteristics of slope
2012，China Civil Engineering Journal

Source ：

Chinese Journal of Semiconductors

ISSN： 0253-4177

Year： 2007

Issue： SUPPL.

Volume： 28

Page： 448-451

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 5

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

Get Fulltext

Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to