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Author:

Zhang, Lei (Zhang, Lei.) | Cui, Bi-Feng (Cui, Bi-Feng.) | Huang, Hong-Juan (Huang, Hong-Juan.) | Guo, Wei-Ling (Guo, Wei-Ling.) | Wang, Zhi-Qun (Wang, Zhi-Qun.) | Shen, Guang-Di (Shen, Guang-Di.)

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EI Scopus PKU CSCD

Abstract:

A model of internal heat source distribution is presented for quantum-well laser. Three-dimensional temperature distribution of the stripe quantum-well laser is simulated by using the finite element method, and the influence of solder voids between chip and heat sink on the steady-state temperature distribution is discussed. It is found that the chip s internal temperature distribution is influenced by the position and size of solder voids. The localized hot spot may result from the nether solder voids, and the strong localized temperature rises and the hot spot expands with the expanding of the void s dimension. Simulated result shows further that the strongest temperature rise is caused by solder voids under the center of the electrode stripe, and moreover, the highest temperature lies at the front facet. So catastrophic optical damage (COD) will be found at the front facet most possibly, which is in agreement with the test.

Keyword:

Finite element method Quantum well lasers Semiconductor lasers Temperature distribution Three dimensional Heat sinks

Author Community:

  • [ 1 ] [Zhang, Lei]Laboratory of Opto-Electronic Technology, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Zhang, Lei]Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094, China
  • [ 3 ] [Cui, Bi-Feng]Laboratory of Opto-Electronic Technology, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Huang, Hong-Juan]Laboratory of Opto-Electronic Technology, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Guo, Wei-Ling]Laboratory of Opto-Electronic Technology, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Wang, Zhi-Qun]Laboratory of Opto-Electronic Technology, Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Shen, Guang-Di]Laboratory of Opto-Electronic Technology, Beijing University of Technology, Beijing 100022, China

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Source :

Chinese Journal of Lasers

ISSN: 0258-7025

Year: 2007

Issue: 9

Volume: 34

Page: 1203-1207

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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