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Author:

Gao, Zhi-Hua (Gao, Zhi-Hua.) | Chen, Guang-Hua (Chen, Guang-Hua.) | Li, Zhi-Zhong (Li, Zhi-Zhong.) | Deng, Jin-Xiang (Deng, Jin-Xiang.) (Scholars:邓金祥) | Ding, Yi (Ding, Yi.)

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EI Scopus PKU CSCD

Abstract:

The preparation of cubic boron nitride films by using electron-cyclotron-resonance-enhanced-microwave-plasma chemical vapor deposition (MW-ECR CVD). We put forward the qualitative analysis of influences of the flux of N2 and H2 on the configuration of cubic boron nitride films by Fourier transform infrared spectrometry (FTIR). It was found that H2 played an important role on the configuration of cubic boron nitride films in the BF3-H2-N2-Ar gaseous system. But N2 didn't show obvious infection. We analyzed the characteristic of the configuration of cubic boron nitride films prepared by MW-ECR CVD in primary.

Keyword:

Chemical vapor deposition Cubic boron nitride Film preparation Fourier transform infrared spectroscopy Semiconducting films

Author Community:

  • [ 1 ] [Gao, Zhi-Hua]School of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Chen, Guang-Hua]School of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Li, Zhi-Zhong]School of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Deng, Jin-Xiang]School of Applied Mathematics and Physics, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Ding, Yi]School of Physics, Lanzhou University, Lanzhou 730000, China

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Source :

Journal of Functional Materials

ISSN: 1001-9731

Year: 2006

Issue: SUPPL.

Volume: 37

Page: 208-210

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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