Method of rapidly confirming activation energy and extrapolating life of electronic device - Details

Author：

Indexed by：

EI Scopus PKU CSCD

Abstract：

A　new　method,　temperature　ramp　method　for　rapid　evaluation　of　reliability　of　microelectronic　devices,　is　proposed　and　a　new　model　is　set　up.　Using　the　new　model,　the　microelectronic　device＇s　activation　energy　can　be　worked　and　its　life　can　be　extrapolated.　The　range　of　temperatures　used　in　experiments　is　so　wide　that　different　degradation　modes　can　take　place,　and　the　problem　of　multi-degradation　mechanisms　can　be　studied.

Keyword：

Electronic equipment Extrapolation Activation energy Temperature Electric currents Degradation Life cycle

Author Community：

[ 1 ] [Li, Jie]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Guo, Chunsheng]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Mo, Yuwei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Xie, Xuesong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Cheng, Yaohai]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Li, Zhiguo]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address：

Email：

Show more details

Related Keywords：

Failure-mechanism identification method in accelerated testing
2006，Chinese Journal of Semiconductors
Rapid temperature prediction method for electronic equipment cabin
2018，Applied Thermal Engineering
Study of different heat exchange technologies influence on the performance of thermoelectric generators
2018，Energy Conversion and Management
An Overview on Linear Giant Magnetoresistance Materials of Telluride
2020，Materials Reports

Source ：

Chinese Journal of Semiconductors

ISSN： 0253-4177

Year： 2005

Issue： 8

Volume： 26

Page： 1662-1666

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 8

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

Get Fulltext

Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to