Characteristics comparison of AlGaN/GaN HFET for three variant vertical structure - Details

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Abstract：

By　the　compared　studies　on　the　three　AlGaN/GaN　heterojunction　field　effect　transistor　(HFET)　structures　with　normal,　inverted,　and　double　heterostructure,　it　is　found　that　the　normal　structure　is　the　most　simple　one　and　is　easily　controllable　for　layer　growth.　The　characteristics　of　inverted　structure　are　poorer　than　that　with　normal　structure,　and　those　characteristics　with　double　heterostructure　are　better　than　that　with　normal　and　inverted　structure,　but　its　layer　growth　is　much　more　complicated.

Keyword：

Semiconducting aluminum compounds Performance Molecular beam epitaxy Heterojunctions Field effect transistors Structure (composition) Gallium nitride

Author Community：

[ 1 ] [Lu, Changzhi]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Feng, Shiwei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Wang, Dongfeng]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Zhang, Xiaoling]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Xie, Xuesong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [He, Yan]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Zhang, Hao]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Xu, Liguo]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 9 ] [Yuan, Mingwen]13th Institute, China Electronic Technology Group Corporation, Shijiazhuang 050051, China
[ 10 ] [Li, Xiaobai]13th Institute, China Electronic Technology Group Corporation, Shijiazhuang 050051, China
[ 11 ] [Zeng, Qingming]13th Institute, China Electronic Technology Group Corporation, Shijiazhuang 050051, China

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Source ：

Chinese Journal of Semiconductors

ISSN： 0253-4177

Year： 2005

Issue： SUPPL.

Volume： 26

Page： 155-157

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SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 3

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信息科学技术学院本学院/部未明确归属的数据

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