Direct growth of large-area graphene by cross-linked parylene graphitization toward photodetection - Details

Author：

Indexed by：

EI Scopus

Abstract：

Large　area　uniform　graphene　was　directly　grown　on　insulating　substrate　by　cross-linked　Parylene　graphitization.　The　as-grown　graphene　was　used　for　the　fabrication　of　graphene-Si　Schottky　junction　photodetector　with　a　responsivity　of　275.9　mA/W.　©　2019　The　Author(s)

Keyword：

Photodetectors Graphene Graphite Graphitization

Author Community：

[ 1 ] [Dong, Yibo]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Cheng, Chuantong]State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing; 100083, China
[ 3 ] [Xu, Chen]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Mao, Xurui]State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing; 100083, China
[ 5 ] [Xie, Yiyang]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Pan, Guanzhong]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Wang, Qiuhua]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
[ 8 ] [Sun, Jie]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
[ 9 ] [Sun, Jie]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China