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Author:

Zhang, Hao (Zhang, Hao.) | Deng, Jinxiang (Deng, Jinxiang.) (Scholars:邓金祥) | Kong, Le (Kong, Le.) | Pan, Zhiwei (Pan, Zhiwei.) | Bai, Zhiying (Bai, Zhiying.) | Wang, Jiyou (Wang, Jiyou.)

Indexed by:

EI Scopus SCIE

Abstract:

To investigate the effect of thickness on the structural and optical properties of niobium-doped beta gallium oxide (beta-Ga2O3:Nb) thin films, a series of beta-Ga2O3:Nb thin films with different thicknesses were prepared by radio-frequency magnetron method. The crystalline quality is highly improved when the film thickness exceeds 145 nm. The surface exhibits different morphologies under different film thicknesses. The average transmittance of all the films are over 80% in visible range, and that the ultraviolet absorption edge shifts to longer wavelength indicates the bandgap shrinks with increasing the film thickness. Moreover, the photoluminescence spectrum measurements indicate that fewer defects were formed when the film thickness is around 145 nm.

Keyword:

thin films niobium energy gap surface morphology photoluminescence sputter deposition photoluminescence spectrum ultraviolet absorption edge radio-frequency magnetron method bandgap doping gallium compounds film thickness Ga2O3:Nb crystalline quality niobium-doped beta gallium oxide niobium-doped beta-Ga2O3 thin films

Author Community:

  • [ 1 ] [Zhang, Hao]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 2 ] [Deng, Jinxiang]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 3 ] [Kong, Le]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 4 ] [Pan, Zhiwei]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 5 ] [Bai, Zhiying]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 6 ] [Wang, Jiyou]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 邓金祥

    [Deng, Jinxiang]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

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Source :

MICRO & NANO LETTERS

ISSN: 1750-0443

Year: 2019

Issue: 6

Volume: 14

Page: 701-704

1 . 3 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:123

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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