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Author：

Zhang, Hao (Zhang, Hao.) | Deng, Jin-Xiang (Deng, Jin-Xiang.) (Scholars：邓金祥) | Kong, Le (Kong, Le.) | Pan, Zhiwei (Pan, Zhiwei.) | Bai, Zhiying (Bai, Zhiying.) | Wang, Jiyou (Wang, Jiyou.)

Indexed by：

EI Scopus SCIE

Abstract：

The　Nb-doped　-Ga2O3　(-Ga2O3:Nb)　thin　films　have　been　deposited　on　the　Si　and　quartz　substrates　by　radio-frequency　magnetron　technique　in　argon　ambient.　The　effects　of　annealing　atmosphere　on　the　structural　and　optical　properties　of　-Ga2O3:Nb　thin　films　have　been　investigated.　The　crystallinity　of　-Ga2O3:Nb　film　is　improved　obviously　after　annealing.　An　increase　in　surface　roughness　is　observed　on　annealed　films.　The　bandgap　from　5.19　to　5.26　eV　is　obtained　after　annealing　in　different　atmosphere,　which　is　larger　than　the　5.09　eV　before　annealing.　Moreover,　the　red-shift　of　photoluminescence　emission　peak　is　observed　after　annealing,　and　the　annealing　atmosphere　has　an　influence　on　the　peak　intensity.

Keyword：

optical properties photoluminescence absorption coefficients niobium SiO2 quartz substrates structural properties semiconductor thin films bandgap annealed films annealing sputter deposition photoluminescence emission peak thin films crystallinity red-shift surface roughness energy gap ultraviolet spectra Si visible spectra annealing atmosphere wide band gap semiconductors gallium compounds semiconductor growth peak intensity argon ambient Si substrates radiofrequency magnetron technique Ga2O3:Nb red shift

Author Community：

  • [ 1 ] [Zhang, Hao]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 2 ] [Deng, Jin-Xiang]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 3 ] [Kong, Le]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 4 ] [Pan, Zhiwei]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 5 ] [Bai, Zhiying]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 6 ] [Wang, Jiyou]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

Reprint Author's Address：

  • 邓金祥

    [Deng, Jin-Xiang]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

Email：


jdeng@bjut.edu.cn
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Source ：

MICRO & NANO LETTERS

ISSN： 1750-0443

Year： 2019

Issue： 1

Volume： 14

Page： 62-65

1 . 3 0 0

JCR@2022

ESI Discipline： PHYSICS;

ESI HC Threshold：123

Cited Count：

WoS CC Cited Count： 13

SCOPUS Cited Count： 16

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 8

Affiliated Colleges：

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