For　power　semiconductor　devices,　such　as　IGBTs,　MOSFETs　and　FRDs,　a　high　area　efficiency　of　the　edge　termination　structure　can　enlarge　the　active　area　and　thus　improve　the　current　capacity　for　a　given　chip　area.　In　this　paper,　a　double-sided　edge　termination　(DSET)　is　proposed　for　the　first　time.　Simulation　results　show　that　it　can　improve　the　breakdown　voltage　by　about　42%　without　increasing　the　width　or　area　of　edge　the　termination　and　the　thickness　of　the　chip.　©　2017　IEEE.