Novel design of superjunction structure in third-generation SiGe HBTs for high breakdown voltage - Details

Author：

Indexed by：

EI Scopus

Abstract：

In　order　to　enhance　the　breakdown　voltage　of　third-generation　SiGe　HBTs　at　no　expense　of　RF　performance　and　current　handling　capability,　the　superjunction　(SJ)　structure　is　studied.　It　is　shown　that　the　depth　of　SJ　should　be　designed　carefully　and　cannot　exceed　18%　of　the　total　width　of　collector-base　space　charge　region.　Furthermore,　a　novel　double　SJ　layers　structure　with　unequal　depth　is　presented,　which　could　effectively　improve　avalanche　behavior　with　an　increase　6.7%　in　BVCBO　and　33.3%　in　BVCEO.　©　2016　IEEE.

Keyword：

Si-Ge alloys Electric breakdown

Author Community：

[ 1 ] [Wang, Xiao]Research Lab of RF Devices and RFICs, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Jin, Dongyue]Research Lab of RF Devices and RFICs, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Zhang, Wanrong]Research Lab of RF Devices and RFICs, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Zhao, Xinyi]Research Lab of RF Devices and RFICs, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Guo, Yanling]Research Lab of RF Devices and RFICs, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Fu, Qiang]Research Lab of RF Devices and RFICs, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Wang, Di]Research Lab of RF Devices and RFICs, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing; 100124, China

Reprint Author's Address：

Email：

Show more details

Related Keywords：

A novel design methodology for breakdown voltage enhancement in the third-generation SiGe HBTs
2016，13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
Novel Design of SOI SiGe HBTs with High Johnson's Figure-of-Merit
2018，3rd IEEE International Conference on Integrated Circuits and Microsystems, ICICM 2018
Novel superjunction collector power SiGe HBTs with high thermal stability
2014，2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
A low power SiGe HBT LNA utilizing serial inductance for wideband matching
2008，2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008

Source ：

Year： 2016

Language： English

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 12

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

Get Fulltext

DOI Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to