A 0.662ppm/°C high PSRR CMOS bandgap voltage reference - Details

Author：

Qu, Yang (Qu, Yang.) | Peng, Xiao-Hong (Peng, Xiao-Hong.) | Hou, Li-Gang (Hou, Li-Gang.) | Dai, Tian-Hui (Dai, Tian-Hui.) | Wang, Yu-Chen (Wang, Yu-Chen.)

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Abstract：

A　novel　low　temperature　coefficient　(TC)　high　power　supply　rejection　ration　(PSRR)　CMOS　bandgap　voltage　reference　(BGR)　is　implemented　in　TSMC　0.35μm　CMOS　Technology.　This　design　can　be　applied　to　voltage　regulators　particularly　used　in　implanted　chips.　The　temperature　compensation　is　optimized　by　adjusting　proper　ratio　of　resistances　which　have　opposite　TC.　Its　PSRR　is　improved　by　using　cascode　current　mirrors　and　adopting　an　independent　current　source　structure.　The　design　operates　within　a　range　of　2.3V　to　5.5V　and　has　a　line　sensitivity　of　0.116%/V.　At　room　temperature,　the　reference　voltage　is　1.14V　and　has　a　measured　TC　of　0.662ppm/°C　in　a　wide　temperature　range　of-40　°C　to　125　°C.　The　circuit　performs　a　PSRR　property　of　96dB@1KHz　and　more　than　30dB@1MHz　with　a　start-up　time　below　5　μs.　©　2016　IEEE.

Keyword：

Integrated circuit design Temperature Voltage measurement Voltage regulators Energy gap CMOS integrated circuits

Author Community：

[ 1 ] [Qu, Yang]VLSI and System Lab, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Peng, Xiao-Hong]VLSI and System Lab, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Hou, Li-Gang]VLSI and System Lab, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Dai, Tian-Hui]VLSI and System Lab, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Wang, Yu-Chen]VLSI and System Lab, Beijing University of Technology, Beijing; 100124, China

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Source ：

Year： 2016

Page： 1363-1365

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 5

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 6

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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