CMOS 1.2V bandgap voltage reference design - Details

Author：

Feng, Chao (Feng, Chao.) | Wang, Jinhui (Wang, Jinhui.) | Wu, Wei (Wu, Wei.) | Hou, Ligang (Hou, Ligang.) | Kang, Jianbo (Kang, Jianbo.)

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EI Scopus

Abstract：

A　typical　bandgap　voltage　reference　based　on　CSMC　0.35　μm　CMOS　technology　is　designed　and　fabricated.　The　overall　bandgap　architecture　is　optimized　to　achieve　high　accuracy　temperature　and　power　supply　independent　voltage　reference.　The　design　consists　of　the　bandgap　core　circuit,　op-amp,　and　start-up　circuit.　The　test　results　show　that　the　bandgap　reference　circuit　provides　reference　voltage　of　1.2128　V　to　1.2175　V　with　3.3　V　power　supply　and　temperature　range　from　-40°C　to　80°C　simultaneously,　and　the　temperature　coefficient　is　32.2ppm/°C.　The　total　layout　area　including　dummy　structures　is　135　um×236　um.　©　2013　IEEE.

Keyword：

Integrated circuit design Temperature Voltage measurement Operational amplifiers Energy gap CMOS integrated circuits

Author Community：

[ 1 ] [Feng, Chao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wang, Jinhui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Wu, Wei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Hou, Ligang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Kang, Jianbo]616# Zhongshan West Road, Shijiazhuang, Hebei 051008, China

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Source ：

ISSN： 2162-7541

Year： 2013

Language： English

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 11

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 10

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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