In　order　to　achieve　the　packages　with　much　higher　performance,　more　I/Os,　lower　profile　and　lighter　weight,　the　thickness　of　silicon　wafer　has　been　decreased　dramatically　in　recent　years,　but　which　degrades　the　strength　of　thinned　wafer.　In　this　paper,　three-point　bending　test　was　adopted　to　evaluate　the　thinned　wafer　fracture　strength,　and　the　impacts　of　back-grinding　process　parameters　on　the　wafer　fracture　strength　were　addressed.　Results　show　the　trend　of　an　increase　in　wafer　strength　with　an　increase　in　grinding　wheel　rotational　speed　and　a　decrease　in　grinding　wheel　feed　rate.　Also,　it　is　found　that　the　strength　decreases　progressively　from　the　center　of　wafer　to　the　edge　for　most　wafer　samples.　©　2016　IEEE.