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Author:

Lan, Chuwen (Lan, Chuwen.) | Ma, He (Ma, He.) (Scholars:马赫) | Wang, Manting (Wang, Manting.) | Gao, Zehua (Gao, Zehua.) | Liu, Kai (Liu, Kai.) | Bi, Ke (Bi, Ke.) | Zhou, Ji (Zhou, Ji.) | Xin, Xiangjun (Xin, Xiangjun.)

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EI Scopus SCIE PubMed

Abstract:

Recently, all-dielectric metasurfaces (AMs) have emerged as a promising platform for high-efficiency devices ranging from the terahertz to optical ranges. However, active and fast tuning of their properties, such as amplitude, phase, and operating frequency, remains challenging. Here, a generic method is proposed for obtaining high-efficiency active AMs from the terahertz to optical ranges by using hybrid structures integrated with phase-change materials. Various phase-change mechanisms including metalinsulator phase change, nonvolatile phase change, and ferroelectric phase change are investigated. We first experimentally demonstrate several high-efficiency active AMs operating in the terahertz range based on hybrid structures composed of free-standing silicon microstructures covered with ultrathin phase-change nanofilms (thickness d << lambda). We show that both the frequencies and the strength of the Mie resonances can be efficiently tuned, resulting in unprecedented modulation depth. Furthermore, detailed analyses of available phase-change materials and their properties are provided to offer more options for active AMs. Finally, several feasible hybrid structures for active AMs in the optical range are proposed and confirmed numerically. The broad platform built in this work for active manipulation of waves from the terahertz to optical ranges may have numerous potential applications in optical devices including switches, modulators, and sensors.

Keyword:

terahertz tunability optical range all-dielectric metasurfaces phase-change materials

Author Community:

  • [ 1 ] [Lan, Chuwen]Beijing Univ Posts & Telecommun, Sch Informat & Commun Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 2 ] [Wang, Manting]Beijing Univ Posts & Telecommun, Sch Informat & Commun Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 3 ] [Gao, Zehua]Beijing Univ Posts & Telecommun, Sch Informat & Commun Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 4 ] [Bi, Ke]Beijing Univ Posts & Telecommun, Sch Informat & Commun Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 5 ] [Lan, Chuwen]Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
  • [ 6 ] [Wang, Manting]Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
  • [ 7 ] [Gao, Zehua]Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
  • [ 8 ] [Bi, Ke]Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
  • [ 9 ] [Lan, Chuwen]Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China
  • [ 10 ] [Xin, Xiangjun]Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China
  • [ 11 ] [Ma, He]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 12 ] [Liu, Kai]Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
  • [ 13 ] [Zhou, Ji]Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

Reprint Author's Address:

  • [Gao, Zehua]Beijing Univ Posts & Telecommun, Sch Informat & Commun Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;;[Bi, Ke]Beijing Univ Posts & Telecommun, Sch Informat & Commun Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;;[Gao, Zehua]Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China;;[Bi, Ke]Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China;;[Xin, Xiangjun]Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2019

Issue: 15

Volume: 11

Page: 14229-14238

9 . 5 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:211

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 31

SCOPUS Cited Count: 33

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 10

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