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Author:

Teo, K.B.K. (Teo, K.B.K..) | You, B. (You, B..) | Rupesinghe, N.L. (Rupesinghe, N.L..) | Newham, A. (Newham, A..) | Greenwood, P. (Greenwood, P..) | Buttress, S. (Buttress, S..) | Cole, M.T. (Cole, M.T..) | Tao, L. (Tao, L..) | Lee, J. (Lee, J..) | Akinwande, D. (Akinwande, D..) | Celebi, K. (Celebi, K..) | Park, H.G. (Park, H.G..) | Sun, J. (Sun, J..)

Indexed by:

EI Scopus

Abstract:

Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed. © 2013 IEEE.

Keyword:

Nanotechnology Activation energy Silicon wafers Graphene Graphene transistors Copper compounds Hole mobility Silica Growth kinetics

Author Community:

  • [ 1 ] [Teo, K.B.K.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 2 ] [You, B.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 3 ] [Rupesinghe, N.L.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 4 ] [Newham, A.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 5 ] [Greenwood, P.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 6 ] [Buttress, S.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 7 ] [Cole, M.T.]Aixtron Ltd, Nanoinstruments, Swavesey, Cambridge CB24 4FQ, United Kingdom
  • [ 8 ] [Tao, L.]Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX 78712, United States
  • [ 9 ] [Lee, J.]Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX 78712, United States
  • [ 10 ] [Akinwande, D.]Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX 78712, United States
  • [ 11 ] [Celebi, K.]Department of Mechanical and Process Engineering, ETH Zurich, Zurich CH-8092, Switzerland
  • [ 12 ] [Park, H.G.]Department of Mechanical and Process Engineering, ETH Zurich, Zurich CH-8092, Switzerland
  • [ 13 ] [Sun, J.]Optoelectronics Lab, Beijing University of Technology, Beijing 100124, China
  • [ 14 ] [Sun, J.]MC2, Chalmers University of Technology, 41296, Sweden

Reprint Author's Address:

  • [teo, k.b.k.]aixtron ltd, nanoinstruments, swavesey, cambridge cb24 4fq, united kingdom

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Source :

ISSN: 1944-9399

Year: 2013

Page: 1200-1203

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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