Design of dual band SiGe HBT LNA with EM simulation - Details

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Abstract：

This　paper　presents　a　dual　band　LNA　with　0.35μm　SiGe　HBT　for　two　standards　which　can　operate　at　GSM　0.9GHz　and　WLAN　2.4GHz.　Inductor　degeneration　in　emitter　is　introduced　to　decouple　the　noise　factor　from　the　input　impedance.　Current　reuse　topology　is　proposed　to　reduce　the　power　consumption　and　enhance　the　transmission　gain.　The　input　matching　is　achieved　through　serial　and　parallel　LC　circuit　which　can　resonate　at　two　frequencies　simultaneously.　A　full　electro-magnetic　(EM)　simulation　considering　circuit＇s　parasitic　parameters　is　utilized　to　decrease　the　discrepancies　between　the　simulated　and　measured　results,　which　is　always　large　between　the　schematic　simulation　results　and　real　measured　data　for　RFIC.　The　EM　simulation　results　of　this　presented　design　show　that　transmission　gains　of　12dB　and　14dB,　noise　figures　of　4.2dB　and　4.5　dB　are　achieved　respectively　at　0.9GHz　and　2.4GHz.　And　both　S11　and　S22　are　below　-10dB.　The　power　consumption　is　24.5mW　under　a　power　supply　voltage　of　3.5V.　©　2012　IEEE.

Keyword：

Millimeter waves Resonant circuits Low noise amplifiers Electric power utilization Si-Ge alloys

Author Community：

[ 1 ] [Lu, Z.Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Xie, H.Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Zhang, W.R.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Guo, Z.J.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Xing, G.H.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Zhang, Y.J.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

Reprint Author's Address：

[lu, z.y.]college of electronic information and control engineering, beijing university of technology, beijing 100124, china

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Related Keywords：

Impact of bias current and geometry on noise performance of SiGe HBT low noise amplifier
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Design of dual band SiGe HBT LNA with current reuse topology
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Source ：

Year： 2012

Volume： 5

Page： 2001-2003

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 7

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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