Design of dual band SiGe HBT LNA with current reuse topology - Details

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Abstract：

This　paper　presents　a　general　methodology　to　design　a　LNA　with　current　reuse　topology　for　two　standards　which　can　operate　at　mobile　band　of　1.8GHz　and　WLAN　band　of　5.2GHz.　A　novel　current　reuse　topology　is　proposed　to　reduce　the　power　consumption　and　enhance　the　transmission　gain.　The　input　matching　is　achieved　through　serial　and　parallel　LC　circuit.　Inductor　degeneration　in　emitter　is　introduced　to　decouple　the　input　impedance　from　the　noise　factor.　The　proposed　LNA　is　designed　in　JAZZ　SiGe　HBT　0.35μm　process.　It　achieves　transmission　gains　of　30dB　and　20dB,　noise　figures　of　2.1dB　and　-1.7　dB　respectively　at　1.8GHz　and　5.2GHz.　And　both　S11　are　below　17dB.　The　power　consumption　is　24.5mW　under　a　power　supply　voltage　of　3.5V.　©　2011　IEEE.

Keyword：

Si-Ge alloys Solid state devices Topology Design Resonant circuits Low noise amplifiers Electric power utilization

Author Community：

[ 1 ] [Lu, Z.Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Xie, H.Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Zhang, W.R.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Huo, W.J.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Guo, Z.J.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Xing, G.H.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Ding, C.B.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 8 ] [Chen, L.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 9 ] [Zhang, Y.J.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

Reprint Author's Address：

[lu, z.y.]college of electronic information and control engineering, beijing university of technology, beijing 100124, china

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Related Keywords：

Design of dual band SiGe HBT LNA with EM simulation
2012，2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
A dual-band SiGe HBT low noise amplifier
2010，
Design of UWB Cascode SiGe BiCMOS LNA with current reuse
2012，2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
Design of SiGe HBT UWB low noise amplifier based on Darlington Cascode structure
2012，Chinese High Technology Letters

Source ：

Year： 2011

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 2

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 3

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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