A dual-band SiGe HBT low noise amplifier - Details

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Abstract：

To　adapt　to　the　rapid　development　of　multi-standard　mobile　communication,　a　low　noise　amplifier　(LNA)　that　can　operate　at　two　frequencies　of　800MHz　and　1.8GHz　respectively　was　designed.　SiGe　HBTs　with　good　noise　performance　were　used　in　the　design.　The　Cascode　circuit　topology　was　adopted　to　reduce　the　Miller　effect　of　the　transistor.　Inductor　degeneration　in　emitter　was　introduced　to　decouple　the　input　impedance　from　the　noise　factor.　The　input　matching　is　achieved　through　serial　and　parallel　LC　circuit　which　can　resonate　at　two　frequencies　simultaneously.　The　output　matching　circuit　was　realized　by　adjusting　the　load　impedance　to　50Ω.　The　simulated　results　show　that　the　transmission　gain　S21　reached　24.3dB　and　21.3dB　at　800MHz　and　1.8GHz　respectively.　Both　S11　reached　-13dB　simultaneously,　Both　S　22　are　lower　than　-27dB.　The　noise　figures　are　3.3dB　and　2.0dB　at　these　two　frequencies　respectively.　Finally　the　layout　of　the　monolithic　integrated　dual-band　LNA　is　presented.　©2010　IEEE.

Keyword：

Si-Ge alloys Low noise amplifiers Resonant circuits

Author Community：

[ 1 ] [Xie, Hong-Yun]Colledge of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Lu, Zhi-Yi]Colledge of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Zhang, Wan-Rong]Colledge of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Shen, Pei]Colledge of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Ding, Chun-Bao]Colledge of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [You, Yun-Xia]Colledge of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Sun, Bo-Tao]Colledge of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

Reprint Author's Address：

Email：

xiehognyun@bjut.edu.cn

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Related Keywords：

Design of dual band SiGe HBT LNA with current reuse topology
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Design of dual band SiGe HBT LNA with EM simulation
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A low power SiGe HBT LNA utilizing serial inductance for wideband matching
2008，2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
A novel 3-5 GHz low noise amplifier using an active inductor
2009，

Source ：

Year： 2010

Page： 668-670

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 7

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 9

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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