A novel 3-5 GHz low noise amplifier using an active inductor - Details

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Abstract：

This　paper　presents　a　novel　3-5　GHz　SiGe　HBT　low　noise　amplifier　(LNA)　using　an　active　inductor.　The　use　of　active　inductor　instead　of　passive　inductor　can　greatly　reduce　the　chip　area.　The　active　inductor　compensates　the　decrease　of　gain　of　the　amplifier　and　improves　the　gain　flatness　in　the　high-frequency　band.　The　simulation　results　show　the　LNA　has　gain　(S21)　of　24.856　dB　with　0.056　dB　variation　over　the　3　GHz　to　5　GHz　band.　The　matched　input　and　output　reflectance　(S11　and　S22)　are　less　than　-18　dB　and　-14　dB,　respectively.　In　additon,　LNA　is　unconditionally　stable　over　the　entire　band.

Keyword：

High frequency amplifiers Low noise amplifiers Heterojunction bipolar transistors Feedback Computational electromagnetics Microwave devices Si-Ge alloys Electric inductors

Author Community：

[ 1 ] [You, Yunxia]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, Wanrong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Xie, Hongyun]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Shen, Pei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Huang, Yiwen]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Huang, Lu]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Sun, Botao]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China

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Related Keywords：

Impact of high frequency correlated noise on SiGe HBT low noise amplifier design
2012，2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012
The feedback technology for gain flatness and stability of UWB LNA
2011，
UWB LNA based on current-reused topology and active inductor
2014，Journal of Huazhong University of Science and Technology (Natural Science Edition)
Design and fabrication of SiGe HBT low noise amplifier
2010，Journal of Electronics and Information Technology

Source ：

Year： 2009

Issue： 557 CP

Volume： 2009

Page： 300-303

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 2

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 6

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信息科学技术学院本学院/部未明确归属的数据

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