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Author:

Shen, Pei (Shen, Pei.) | Niu, Guofu (Niu, Guofu.) | Xu, Ziyan (Xu, Ziyan.) | Zhang, Wanrong (Zhang, Wanrong.)

Indexed by:

EI Scopus

Abstract:

This paper investigates the impact of high frequency noise correlation on SiGe HBT LNA design. With correlation, simultaneous noise and impedance match is found to continue to hold approximately. However, a larger size and hence a higher biasing current are required for noise matching. The actual noise figure (NF) of LNAs designed without considering noise correlation is also investigated. Further investigation shows that a size considerably smaller than noise matching size is more preferable, as it produces high gain, high linearity and NF only slightly higher noise figure at much smaller power consumption. © 2012 IEEE.

Keyword:

Si-Ge alloys Low noise amplifiers Monolithic integrated circuits High frequency amplifiers Noise figure Impedance matching (electric)

Author Community:

  • [ 1 ] [Shen, Pei]Electrical and Computer Engineering Department, Auburn University, Auburn, AL 36849, United States
  • [ 2 ] [Shen, Pei]Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Niu, Guofu]Electrical and Computer Engineering Department, Auburn University, Auburn, AL 36849, United States
  • [ 4 ] [Xu, Ziyan]Electrical and Computer Engineering Department, Auburn University, Auburn, AL 36849, United States
  • [ 5 ] [Zhang, Wanrong]Beijing University of Technology, Beijing, 100124, China

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Source :

Year: 2012

Page: 125-128

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 10

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